SB1H90 Datasheet, PDF (1/2 Pages) Vishay Siliconix – High Voltage Schottky Rectifiers

SB1H90-SB1H100
1.0A Axial Leaded High-Voltage Schottky Rectifier
Features
· High barrier technology for improved high T_J
· _{Guardring for overvoltage protection}
· _{Low power losses and high efficiency}
· Low forward voltage drop
· Very low leakage current
· _{High forward surge capability}
· High frequency operation
· Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
· Case: DO-41
Epoxy meets UL 94V-0 flammability rating
· Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
· Polarity: Color band denotes the cathode end
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
SYMBOL
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
Voltage rate of change (rated V_R)
dV/dt
Peak repetitive reverse surge current at t_p = 2.0 µs, 1 kHz
I_RRM
Maximum operating junction temperature
T_J
Storage temperature range
T_STG
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage ⁽¹⁾
I_F = 1.0 A
I_F = 1.0 A
I_F = 2.0 A
I_F = 2.0 A
Maximum reverse current at rated V_R ⁽²⁾
Notes:
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
SB1H90
90
63
90
SB1H100
100
70
100
1.0
50
SYMBOL
V_F
I_R
10 000
1.0
175
- 55 to + 175
SB1H90
SB1H100
0.77
0.62
0.86
0.70
1.0
0.5
1 of 2
UNIT
V
V
V
A
A
V/µs
A
°C
°C
UNIT
V
µA
mA