S9011 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

S9011
SILICON EPITAXIAL PLANAR TRANSISTOR
Features
· Collector Current.(I_C= 30mA）
· ^{Power dissipation.(P}C^=200mW)
Mechanical Data
· Case: SOT-23, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagrams
· Approx. Weight: 0.008 grams
A
BC
TOP VIEW
E
D
G
H
K
M
J
L
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Symbol Value
V_CBO
50
V_CEO
30
V_EBO
5
I_C
30
P_C
200
T_j,T_stg -55~150
Units
V
V
V
mA
mW
℃
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