S8A Datasheet, PDF (1/2 Pages) Micro Commercial Components – 8 Amp Silicon Rectifier 50 to 1000 Volts

S8A - S8M
SURFACE MOUNT RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 8 .0 A
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop
! Low Power Loss
! _{Built-in Strain Relief}
! Plastic Case Material has UL Flammability
Classification Rating 94V-O





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! Case: SMC/DO-214AB, Molded Plastic
! Terminals: Solder Plated, Solderable
A
C
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
D
! Marking: Type Number
! Weight: 0.21 grams (approx.)
J
H
G
E
SMC(DO-214AB)
Dim Min Max
A
5.59 6.22
B
6.60 7.11
C
2.75 3.18
D
0.15 0.31
E
7.75 8.13
G
0.10 0.20
H
0.76 1.52
J
2.00 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol S8A
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
VR
RMS Reverse Voltage
VR(RMS)
35
Average Rectified Output Current
@T_A = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IO
IFSM
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I_F = 8.0A
@T_A = 25°C
@T_A = 100°C
V FM
IRM
Typical Junction Capacitance (Note 1)
Cj
Typical Thermal Resistance Junction to Ambient
R
JA
S8B S8D S8G S8J
S8K S8M
Unit
100
200
400
600
800 1000
V
70
140
280
420
560
700
V
8.0
A
300
A
1.2
V
10
100
µA
150
pF
30
°C/W
Operating Temperature Range
Tj
-50 to +150
°C
Storage Temperature Range
TSTG
-50 to +150
°C
Note: _{1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.}
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