S5820 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

S5820-S5822
3.0A Surface Mount Schottky Barrier Rectifier
Features
· Metal-Semiconductor junction with guard ring
· _{Epitaxial construction}
· Low forward voltage drop,low switching losses
· High surge capability
· For use in low voltage,high frequency inverters free
wheeling,and polarity protection applications
· The plastic material carries U/L recognition 94V-0
Mechanical Data
· Case:JEDEC SMC,molded plastic
· Terminals: Solderable per
MIL- STD-202,method 208
· Polarity: Color band denotes cathode
· Weight: 0.007 ounces,0.21 grams
· Mounting position: Any
A
J
H
Maximum Ratings and Electrical Characteristics
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
S5820
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T_L=90
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage @ 3.0A
(Note 1)
@ 9.4A
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
V_F
20
14
20
0.475
0.85
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Typical junction capacitance (Note2)
C_J
Typical thermal resistance (Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
1 of 2
B
SMC
Dim Min Max
A
5.40 6.22
C
B
6.10 7.11
C
2.92 3.18
D
0.15 0.40
E
7.55 8.13
D
G
0.10 0.21
H
0.76 1.52
J
2.00 2.62
All Dimensions in mm
G
E
S5821
30
21
30
3.0
80.0
0.50
0.90
2.0
20.0
250
20
- 55 ---- + 125
- 55 ---- + 150
S5822
40
28
40
UNITS
V
V
V
A
A
0.525
V
0.95
mA
pF
/W