S5295B Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – High Speed Rectifier Applications (fast recovery)

S5295B - S5295J
FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 100 - 600V
CURRENT: 0.5 A
Features
! High current capability
! High surge current capability
! High reliability
! Low reverse current
! Low forward voltage drop
! Fast switching for high efficiency
Mechanical Data
! ^{Case : DO-41 Molded plastic}
! ^{Epoxy : UL94V-O rate flame retardant}
! Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
! ^{Polarity : Color band denotes cathode end}
! ^{Mounting position : Any}
! Weight : 0.339 gram
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol _{S5295B S5295G S5295J}
Unit
Maximum Repetitive Peak Reverse Voltage
VRRM
100
400
600
V
Maximum Reverse Voltage (DC)
VR
75
300
500
V
Maximum Average Forward Current
IF(AV)
0.5
A
Maximum Peak One Cycle Surge Forward Current
IFSM
30
A
( 50 Hz, Non-Repetitive )
Maximum Peak Forward Voltage at IF = 1.0 A
VF
1.5
V
Maximum Repetitive Peak Reverse Current at VRRM
IR
10
µA
Maximum Reverse Recovery Time (Note 1)
Trr
1.5
µs
Junction Temperature Range
TJ
- 40 to + 125
°C
Storage Temperature Range
TSTG
- 40 to + 125
°C
Notes :
(1) Reverse Recovery Test Condition : IF = 20 mA, IR = 1mA
1 of 2
www.sunmate.tw