S2AAF Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – SURFACE MOUNT SILICON RECTIFIER DIODES

S2AAF - S2MAF
SURFACE MOUNT SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 2.0 A
Features
! ^{Glass Passivated Die Construction}
! Low Forward Voltage Drop and High Current
Capability
! _{Ideally Suited for Automated Assembly}
B
C
E
Mechanical Data
! Case: SMAF,Molded Plastic
! Terminals: Solder Plated, Solderable
D
per MIL-STD-750, Method 2026
H
! Polarity:Color band denotes cathode end
L
! ^{Mounting Position:Any}
! Weight:0.0018 ounce, 0.064 grams
E
A
SMAF
Dim Min Max Typ
A 4.75 4.85 4.80
B 3.68 3.72 3.70
C 2.57 2.63 2.60
D _{0.097 1.03} 1.00
E 1.38 1.42 1.40
H 0.13 0.17 0.15
L 0.63 0.67 0.65
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol S2AAF S2BAF S2DAF S2GAF S2JAF S2KAF S2MAF Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
V_RRM
V_RWM
50
V_R
V_R(RMS) 35
Average Rectified Output Current
@ T_T = 100°C I_(AV)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
I_FSM
(JEDEC Method)
Forward Voltage
@ I_F = 2.0A V_FM
Peak Reverse Current
at Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 125°C
I_RM
Typical Total Capacitance (Note 1)
C_T
Typical Thermal Resistance, Junction to Terminal
(Note 2)
R_qJT
100 200 400 600 800 1000
V
70
140 280 420 560 700
V
2.0
A
60
A
1.1
V
5.0
200
µA
30
pF
16
°C/W
Operating and Storage Temperature Range
T_j, T_STG
-65 to +150
°C
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2. Thermal Resistance Junction to Terminal, unit mounted on PC board with 5.0 mm² (0.013 mm thick) copper pads as heat sink.
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