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S07AF Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – SURFACE MOUNT RECTIFIER DIODES
S07AF - S07MF
SURFACE MOUNT SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 0.7 A
Features
! Glass passivated device
! Ideal for surface mouted applications
! Low leakage current
! Metallurgically bonded construction
! High temperature soldering:
! 250 /10 seconds at terminals
Mechanical Data
! Case: SMAF,Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity:Color band denotes cathode end
! Mounting Position:Any
! Weight:0.0018 ounce, 0.064 grams
B
C
E
D
H
L
E
A
SMAF
Dim Min Max Typ
A 4.75 4.85 4.80
B 3.68 3.72 3.70
C 2.57 2.63 2.60
D 0.097 1.03 1.00
E 1.38 1.42 1.40
H 0.13 0.17 0.15
L 0.63 0.67 0.65
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol S07AF S07BF S07DF S07GF S07JF S07KF S07MF
Unit
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TA=65 C (NOTE 1)
VRMS
35
70
140
280
420
560
700
V
VDC
50
100
200
400
600
800
1000
V
I(AV)
0.7
A
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
25.0
A
rated load (JEDEC Method) TL=25 C
Maximum instantaneous forward voltage at 1.0A VF
1.1
V
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=125 C
IR
10.0
50.0
µA
Typical junction capacitance (NOTE 2)
CJ
15
pF
Typical thermal resistance (NOTE 3)
RθJA
180
K/W
Maximum reverse recovery time (NOTE 5)
trr
1.8
µs
Operating junction and storage temperature range TJ,TSTG
-50 to +150
C
Note: 1.Averaged over any 20ms period.
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
4.Measured with IF=0.5A, IR=1A, Irr=0.25A.
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