RU3YX Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY RECTIFIER DIODES

RU3YX - RU3C
HIGH EFFICENCY RECTIFIER DIODES
VOLTAGE RANGE: 100 - 1000V
CURRENT: 1.1-2.0 A
Features
! ^{Low cost}
! ^{Diffused junction}
! ^{Low leakage}
! Low forward voltage drop
! Easily cleaned with freon, alcohol, lsopropand and
similar solvents
! ^{The plastic material carries U/L recognition 94V-0}
Mechanical Data
! Case : DO-15 Molded plastic
! Epoxy : UL94V-O rate flame retardant
! Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
! Polarity : Color band denotes cathode end
! Mounting position : Any
! Weight : 0.465 gram
A
B
A
C
D
DO-15
Dim
Min
Max
A
25.40
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^TA ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol _{RU3YX RU3 RU3A RU3B RU3C} Unit
Maximum peak repetitive reverse voltage
V_RRM
100
400
600
800
1000
V
Maximum RMS voltage
V_RMS
70
280
420
560
700
V
Maximum DC blocking voltage
V_DC
100
400
600
800
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
10ms single half-sine-w ave
superimplsed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ I_F=I_F(AV)
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
Typical junction capacitance
(Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
I_F(AV)
2.0
I_FSM
50.0
V_F
I_R
t_rr
C_J
R_θJL
T_J
0.95
300.0
50
50
1.5
1.1
20.0
1.5
10.0
400.0
100
30
12
- 55 ----- + 150
1.5
A
A
2.5
V
A
ns
pF
̼ͤ
Storage temperature range
T_STG
NOTE: 1.Measured with I_F=0.5A, I_R=1A, I_rr=0.25A
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance junction to ambient.
- 55 ----- + 150
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