RS3AB Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SURFACE MOUNT RECTIFIER

RS3AB - RS3MB
SURFACE MOUNT FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 50-1000V
CURRENT: 3.0 A
Features
! ^{Glass Passivated Die Construction}
! ^{Fast Recovery Time for High Efficiency}
! ^{Low Forward Voltage Drop and High Current}
Capability
! Ideally Suited for Automatic Assembly
! Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
! Case: SMB/DO-214AA, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! _{Weight: 0.093 grams (approx.)}
B
A
J
H
G
E
SMB(DO-214AA)
Dim Min Max
A
3.30 3.94
C
B
4.06 4.70
C
1.91 2.21
D
0.15 0.31
D
E
5.00 5.59
G
0.10 0.20
H
0.76 1.52
J
2.00 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^TA ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol RS3AB RS3BB RS3DB RS3GB RS3JB RS3KB RS3MB Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
50
VRMS
35
VDC
50
Maximum average forward rectified current
I(AV)
at TL=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
VF
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
IR
Maximum reverse recovery time (NOTE 1)
trr
Typical junction capacitance (NOTE 2)
CJ
Typical thermal resistance (NOTE 3)
RθJA
Operating junction and storage temperature range _TJ,TSTG
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
100 200 400 600 800 1000 V
70 140 280 420 560 700
V
100 200 400 600 800 1000
V
3.0
A
100.0
A
1.3
V
5.0
µA
100.0
150
250
500
ns
60.0
pF
50.0
C/W
-50 to +150
C
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