RS1AB Datasheet, PDF (1/2 Pages) Shanghai Sunrise Electronics – SURFACE MOUNT FAST SWITCHING RECTIFIER

RS1AB - RS1MB
SURFACE MOUNT FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.0 A
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop, High Efficiency
! Low Power Loss
! ^{Fast Recovery Time}
! Plastic Case Material has UL Flammability
Classification Rating 94V-O
Mechanical Data
! Case:SMB(DO-214AA) Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.093 grams (approx.)
B
A
J
H
G
E
SMB(DO-214AA)
Dim Min Max
C
A
3.30 3.94
B
4.06 4.70
C
1.91 2.21
D
0.15 0.31
D
E
5.00 5.59
G
0.10 0.20
H
0.76 1.52
J
2.00 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz resistive or inductive load.
Characteristic
Symbol RS1AB RS1BB RS1DB RS1GB RS1JB RS1KB RS1MB
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=90 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current TA=25^°C
at rated DC blocking voltage TA=100^°C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
VRRM
VRMS
VDC
I(AV)
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
1.0
IFSM
VF
IR
trr
CJ
R_QJL
TJ,TSTG
30.0
1.3
5.0
50.0
150
250
500
15.0
50.0
-65 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
Unit
V
V
V
A
A
V
uA
ns
pF
°_C/W
°C
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