RGP25A Datasheet, PDF (1/2 Pages) General Semiconductor – GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER

RGP25A - RGP25M
FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 2.5 A
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-201AD
Dim
Min
Max
A
25.40
¾
B
7.20
9.50
C
1.20
1.30
D
4.80
5.30
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol RGP25A RGP25B RGP25D RGP25G RGP25J RGP25K RGP25M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
100
200
400
600
800
1000
V
VR
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
(Note 1)
@T_A = 55°C
IO
2.5
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
100
A
rated load (JEDEC Method)
Forward Voltage
@I_F = 2.0A
VFM
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
Reverse Recovery Time (Note 2)
trr
1.3
10
500
150
250
V
µA
500
nS
Typical Junction Capacitance (Note 3)
Cj
28
pF
Operating Temperature Range
Tj
-65 to +125
°C
Storage Temperature Range
TSTG
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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