RGF3AB Datasheet, PDF (1/2 Pages) TAITRON Components Incorporated – 3.0A Sintered Glass Passivated Fast Recovery Rectifier

RGF3AB - RGF3MB
SURFACE MOUNT FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 50-1000V
CURRENT: 3.0 A
Features
! Glass Passivated Die Construction
! Fast Recovery Time for High Efficiency
! Low Forward Voltage Drop and High Current
Capability
! Ideally Suited for Automatic Assembly
! Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
! Case: SMB(DO-214AA),Molded Plastic
! Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
! Polarity: Cathode Band or Cathode Notch
! _{Marking: Type Number}
! _{Weight: 0.093 grams (approx.)}
B
A
J
H
G
E
SMB(DO-214AA)
Dim Min Max
A
3.30 3.94
C
B
4.06 4.70
C
1.91 2.21
D
0.15 0.31
D
E
5.00 5.59
G
0.10 0.20
H
0.76 1.52
J
2.00 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol RGF3AB RGF3BB RGF3DB RGF3GB RGF3JB RGF3KB RGF3MB Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
50
V_R
RMS Reverse Voltage
V_R(RMS) 35
Average Rectified Output Current
@ TT = 75°C
I_O
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load IFSM
(JEDEC Method)
Forward Voltage
@ I _F = 3.0A _VFM
Peak Reverse Current
at Rated DC Blocking Voltage
@ T_A = 25°C
@ TA = 125°C
I_RM
Maximum Recovery Time (Note 3)
t_rr
Typical Junction Capacitance (Note 2)
C_j
Typical Thermal Resistance Junction to Terminal (Note 1) RqJT
Operating and Storage Temperature Range
T_j, T_STG
100 200 400 600
70 140 280 420
3.0
100
1.3
5.0
250
150
250
50
25
-65 to +150
800 1000 V
560 700 V
A
A
V
mA
500
ns
pF
K/W
°C
Notes:
1. Thermal resistance: junction to terminal, unit mounted on PC board with 5.0 mm² (0.013 mm thick) copper pad as heat sink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Reverse recovery test conditions: I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A. See figure 5.
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