RG2Y Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

RG2Y - RG2A
HIGH EFFICIENCY RECTIFIER DIODES
VOLTAGE RANGE: 7 0 - 600V
CURRENT: 1.0- 1.5A
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: D O - 1 5 , Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.40 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-15
Dim
Min
Max
A
25.40
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^TA ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol RG2Y
RG2Z
RG2
Maximum peak repetitive reverse voltage
V_RRM
70
Maximum RMS voltage
V_RMS
49
Maximum DC blocking voltage
V_DC
70
Maximum average forw ard rectified current
9.5mm lead length,
Peak forw ard surge current
@T_A=75
I_F(AV)
1.5
10ms single half-sine-w ave
superimplsed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ I_F=I_F(AV)
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_FSM
V_F
1.1
I_R
Maximum reverse recovery time
(Note1)
t_rr
Typical junction capacitance
(Note2)
C_J
Typical thermal resistance
(Note3)
Operating junction temperature range
R_θJL
T_J
Storage temperature range
T_STG
NOTE: 1.Measured with I_F=0.5A, I_R=1A, Irr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
200
400
140
280
200
400
1.2
60.0
1.5
1.8
500.0
2500.0
50
50
12
- 55 ----- + 150
- 55 ----- + 150
RG2A
600
420
600
1.0
Unit
V
V
V
A
A
2.0
V
A
ns
30
pF
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