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R1200F Datasheet, PDF (1/2 Pages) Rectron Semiconductor – HIGH VOLTAGE FAST RECOVERY RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere)
R1200F-R2000F
0.2/0.5A Axial Leaded High Voltage Rectifier
Features
· Low cost
· Diffus ed junction
· Low leakage
· Low forward voltage drop
· High current capability
· Easily cleaned with alcohol,Isopropanol
and sim ilar s olvents
· The plas tic m aterial carries U/L recognition 94V-0
Mechanical Data
· Case:JEDEC DO--41,m olded plastic
· Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
· Polarity: Color band denotes cathode
· Weight: 0.012ounces ,0.34 gram s
· Mounting pos ition: Any
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
R1200F
R1500F
R1800F
R2000F UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
V R MS
VDC
1200
840
1200
Maximum average f orw ard rectif ied current
9.5mm lead length,
@TA=75
Peak f orw ard surge current
IF (AV)
8.3ms single half -sine-w ave
IF SM
superimposed on rated load @TJ=125
Maximum instantaneous f orw ard voltage
@ 0.5A
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
IR
Maximum reverse capacitance (Note1)
trr
Typical thermal resistance
(Note2)
RθJA
Typical junction capacitance
(Note3)
CJ
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measrued with IF=0.5A, IR=1A, Irr=0.25A.
2. Thermal resistance f rom junction to ambient.
3. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
1 of 2
1500
1050
1500
0.5
1800
1260
1800
30.0
2.5
5.0
100.0
500
35
15
- 55 ---- + 150
- 55 ---- + 150
2000
V
1400
V
2000
V
0.2
A
A
4.0
V
A
ns
̼ͤ
pF