MUR170 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

MUR170-MUR1100
1.0A Axial Leaded High Efficiency Rectifier
Features
· Low cost
· Diffus ed junction
· Low leakage
· Low forward voltage drop
· High crrent capability
· Eas ily cleaned with Freon,Alcohol, ls opropand
and s im ilar s olvents
A
B
A
C
D
Mechanical Data
· _{Cas e:JEDEC DO--41,m olded plas tic}
· _{Term inals : Axial lead ,s olderable per}
MIL- STD-202,Method 208
· Polarity: Color band denotes cathode
· ^{Weight: 0.012 ounces ,0.34 gram s}
· Mounting pos ition: Any
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MUR170 MUR180 MUR190 MUR1100 UNITS
Maximum recurrent peak reverse voltage
V_RRM
700
Maximum RMS voltage
V _{R MS}
490
Maximum DC blocking voltage
V_DC
700
Maximum average forw ard rectif ied current
9.5mm lead length, @T_A=75
I_{F (AV)}
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@ T_J =125
Maximum instantaneous f orw ard voltage
@ 1.0A
I_{F SM}
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance
(Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
C_J
R_θJA
T_J
Storage temperature range
T_STG
N OTE: 1.Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance from junction to ambient.
1 of 2
800
900
560
630
800
900
1.0
30.0
1.7
10.0
100.0
75
15
60
- 55 ----- + 150
- 55 ----- + 150
1000
V
700
V
1000
V
A
A
V
A
ns
pF
/W