MR750 Datasheet, PDF (1/2 Pages) Motorola, Inc – HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION

Features
· Diffused Junction
· Low Forward Voltage Drop
· High Current Capability
· High Reliability
· High Surge Current Capability
Mechanical Data
· _{Case: R-6, Molded Plastic}
· Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
· _{Polarity: Cathode Band}
· _{Weight: 2.1 grams (approx.)}
· _{Mounting Position: Any}
· Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
MR750-MR760
6.0A Axial Leaded Silicon Rectifier
A
B
A
C
D
R-6
Dim
Min
Max
A
25.4
—
B
8.60
9.10
C
1.20
1.30
D
8.60
9.10
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol MR750 MR751 MR752 MR754 MR756 MR758 MR760 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
VR
RMS Reverse Voltage
VR(RMS)
35
Average Rectified Output Current
(Note 1)
@T_A = 60°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@I_F = 6.0A
VFM
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
Typical Junction Capacitance (Note 2)
Cj
100
200
400
600
800 1000
V
70
140
280
420
560
700
V
6.0
A
400
A
1.0
V
5.0
µA
1.0
mA
150
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
R
JA
20
°C/W
Operating Temperature Range
Storage Temperature Range
Tj
TSTG
-50 to +150
°C
-50 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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