MBRA120ET3G Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

MBRA120ET3G
1.0A Surface Mount Schottky Barrier Rectifier
Features
· Highly Stable Oxidation Passivated Junction
· Guardring for Over - Voltage Protection
· Optimized for Low Leakage Current
· Pb / RoHS Free
Mechanical Data
· Case : SMA Molded plastic
· _{Epoxy : UL94V-O rate flame retardant}
· _{Polarity : Color band denotes cathode end}
· Mounting position : Any
· _{Weight : 0.060 gram (Approximately)}
B
A
C
D
J
H
G
E
SMA
Dim Min Max
A
2.29 2.92
B
4.00 4.60
C
1.27 1.63
D
0.15 0.31
E
4.80 5.59
G
0.10 0.20
H
0.76 1.52
J
2.01 2.62
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
RATING
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reversr Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current at TC = 125 °C
Maximum Non-Repetitive Peak Surge Current
(Surge Applied at Rate Load Conditions Halfwave,
Single Phase, 60 Hz)
Maximum Instantaneous Forward Voltage (Note 1)
( I_F = 1.0 A , T_J = 25°C )
( I_F = 2.0 A , T_J = 25°C )
Maximum Instantaneous Reverse Current (Note 1)
( V_R = rated V_R , T_J = 25 °C )
( V_R = rated V_R , T_J = 100 °C )
Thermal Resistance Junction to Lead (Note 2)
Thermal ResistanceJunction to Ambient (Note 2)
Storage/Operating Junction Temperature Range
SYMBOL
V_RRM
V_RWM
V_DC
I_F(AV)
I_FSM
V_F
I_R
I_RH
R_θJL
R_θJA
T_STG ,T_J
Notes :
( 1 ) Pulse Test : Pulse Width ≤ 250 μs, Duty Cycle ≤ 2 %.
( 2 ) Mounted on a Pad Size of 5 mm × 5 mm, PC Board FR4 ( 2 pads ).
VALUE
20
20
20
1.0
40
0.530
0.595
10
1600
34
138
- 55 to + 150
UNIT
V
V
V
V
A
V
μA
ºC/W
ºC/W
ºC
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