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MB2505 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 25 Amperes)
MB2505-MB2510
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE: 50 - 1000V
CURRENT: 25A
Features
! Metal case for Maximum Heat Dissipation
! Surge overload ratings-400 Amperes
! Low forward voltage drop
Mechanical Data
! Case: Metal, electrically isolated
! Epoxy: UL 94V-0 rate flame retardant
! Polarity: As marked
! Mounting position: Any
! Weight: 30 grams
MB-25
(1.415.52)MAX.
.480(12.2)
.425(10.8)
HOLE FOR
NO. 8 SCREW
1.181(30.0)
1.102(28.0)
.673(17.1)
.633(16.1)
.732(18.6)
.692(17.6)
AC
+
AC
.673(17.1)
.633(16.1)
1.181(30.0)
1.102(28.0)
.582(14.8)
.543(13.8)
.033X.250
(0.8X6.4)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol MB2505 MB251 MB252 MB254 MB256 MB258 MB2510 Unit
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM

   
  V
VRMS

      
V
VDC

   
  V
Maximum Average Forward Rectified Output
Current, at TC = 50 (Note 1, 2)
I(AV)

A
Peak Forward Surge Current
8.3ms single half sine - wave superimposed on
IFSM
rated load (JEDEC method )
Rating for Fusing (t<8.3ms)
I2t

A
A 2s
Maximum Instantaneous Forward Voltage Drop
per bridge element at 12.5A
VF

V
Maximum DC Reverse Current at rated TA = 25
DC blocking voltage per element
TA   IR
Isolation Voltage from case to lugs
VISO
Typical Thermal Resistance (Note 1,2)
R
Operating Temperature Range
TJ
Storage Temperature Range
TSTG



2.0
(-65 to +150)
(-65 to +150)
A
mA
VAC
/W


1. Unit mounted on 5" X 6" X 4.9" (12.8cm X 15.2cm X 12.4cm)Al. finned Plate.
2. Bolt down on heat-sink with silicon thermal compound between bridge and mounting sutfae for maximum heat
transfer efficiency with # 10 screw.
1 of 2
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