LLDB3 Datasheet, PDF (1/2 Pages) Formosa MS – DIAC

LLDB3/LLDC34/LLDB4/LLDB6
SILICON BIDIRECTIONAL DIAC
Features
! The glass passivated, three-layer, two terminal, axial lead,
hermetically sealed diacs are designed specifically for
triggering thyristors. They demonstrate low breakover current
at breakover voltage as they withstand peak pulse current.
The breakover symmetry is within four volts with a typical
breakover voltage of LLDB3 32 V, LLDB4 40 V. These diacs
are intended for use in thyristor phase control, circuits for
lamp-dimming, universal-motor speed controls, and heat
controls.
Mechanical Data
! Case: SOD-80/LL34, Glass
! ^{Terminals: Solderable per MIL-STD-202,}
! ^{Method 208}
! Polarity: Cathode Band
! ^{Weight: 0.05 grams (approx.)}
C
B
A
LL34/ SOD-80
Dim
Min
Max
A
3.30
3.70
B
1.30
1.60
C
0.28
0.50
All Dimensions in mm
Absolute Ratings
Characteristic
Power Dissipation on Printed
Circuit(L=10mm)
Repetitive Peak on-state
Current
Storage and Operating Junction Temperature
Electrical Characteristics
TA=50 C
tp=10ms
f=100Hz
Value
LLDB3 LLDC34 LLDB4 LLDB6
150
2.0
2.0
2.0
1.6
-40 to+125/-40 to +110
Symbol
PC
Unit
mW
ITRM
A
TSTG/TJ
C
Characteristic
Condition
C=22nF(Note 2)
Min
Breakover Voltage (Note 2 )
See diagram 1
Typ
Max
Breakover Voltage Symmetry
C=22nF(Note 2)
See diagram 1
Max
I=(IBO to IF=10mA)
Dynamic Breakover Voltage (Note1)
See Diagram 1
Min
Output Voltage (Note 1 )
See Diagram 2
Min
Breakover Current (Note1)
C=22nF(Note 2)
Max
Rise Time (Note1)
See Diagram 3
Typ
Leakage Current (Note1)
VB=0.5 VBO max
see diagram 1
Max
Notes: 1.Electrical characteristics applicable in both forward and reverse directions.
2.Connected in parallel with the devices.
LLDB3
28
32
36
Value
LLDC34
30
34
38
LLDB4
35
40
45
+3
5
5
100
1.5
10
LLDB6
56
60
70
+4
Symbol
VBO
│+VBO│-
│-VBO│
10
│+ V│
VO
IBO
tr
IB
Unit
V
V
V
V
mA
ms
mA