LL914B Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 500mW Hermetically Sealed Glass Fast Switching Diodes

LL914B
SURFACE MOUNT FAST SWITCHING DIODE
Features
! Fast Switching Speed
! Glass Package Version for High Reliability
! High Conductance
! Available in Both Through-Hole and Surface
Mount Versions
C
B
A
Mechanical Data



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34/ SOD-80
! ^{Terminals: Solderable per MIL-STD-202,}
Method 208
Dim
Min
Max
A
3.30
3.70
! Polarity: Cathode Band
B
1.30
1.60
! Weight: 0.05 grams (approx.)
C
0.28
0.50
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{T A = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Rectified Current (Average), Half Wave Rectification with
Resistive Load and f
50MHz (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0µs
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Pd
R
JA
Tj, TSTG
Value
100
75
53
500
150
1.0
2.0
500
1.68
300
-65 to +175
Unit
V
V
V
mA
mA
A
mW
mW/°C
K/W
°C
Electrical Characteristics @T_A=25°C unless otherwise specified
Characteristic
Maximum Forward Voltage
Symbol
VFM
Maximum Peak Reverse Current
IRM
Capacitance
Cj
Reverse Recovery Time
trr
Note: 1. Diode on Ceramic Substrate 10mm x 8mm x 0.7mm.
Min
—
—
—
—
1 of 2
Max
1.0
5.0
50
30
25
4.0
4.0
Unit
V
µA
µA
µA
nA
pF
ns
Test Condition
I_F = 10mA
V_R = 75V
V_R = 70V, T_j = 150°C
V_R = 20V, T_j = 150°C
V_R = 20V
V_R = 0, f = 1.0MHz
I_F = 10mA to I_R = 1.0mA
V_R = 6.0V, R_L = 100