LL41 Datasheet, PDF (1/2 Pages) General Semiconductor – Schottky Diodes

LL41
100mA Surface Mount Schottky Barrier Diode
Features
· _{For general purpose applications}
· This diode features low turn-on voltage
and high breakdown voltage
· This device is protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
· _{This diode is also available in the DO35 case with}
type designation BAT41
· Lead (Pb)-free component
· Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
· Case:SOD-80 Glass case
· _{Weight: approx. 31 mg}
· Cathode Band Color: black
· Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box
C
B
A
SOD-80
Dim
Min
Max
A
3.30
3.70
B
1.30
1.60
C
0.28
0.50
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ T_A = 25°C unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Forward continuous current
T_amb = 25 °C
Repetitive peak forward current t_p < 1 s, δ < 0.5, T_amb = 25 °C
Surge forward current
t_p = 10 ms, T_amb 25 °C
Power dissipation
T_amb = 65 °C
Parameter
Test condition
Reverse breakdown voltage^{2) I}R ^{= 100 µA}
Leakage current²⁾
V_R = 50 V, T_j = 25 °C
Forward voltage²⁾
V_R = 50 V, T_j = 100 °C
I_F = 1 mA
Diode capacitance
I_F = 200 mA
V_R = 1 V, f = 1 MHz
1) _{Valid provided that electrodes are kept at ambient temperature}
2) _{Pulse test, tp = 300 µs}
Symbol
V_RRM
I_F
I_FRM
I_FSM
P_tot
Symbol
Min
V_(BR)
100
I_R
I_R
V_F
V_F
C_D
Value
100
100¹⁾
350¹⁾
750¹⁾
200¹⁾
Typ.
110
400
2
Max
100
20
450
1000
Unit
V
mA
mA
mA
mW
Unit
V
nA
µA
mV
mV
pF
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