HS3AB Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 3.0 AMPS. High Efficient Surface Mount Rectifiers

HS3AB - HS3MB
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 3.0 A
Features
! _{Low cost}
! _{Diffused junction}
! _{Ultra fast switching for high efficiency}
! _{Low reverse leakage current}
! Low forward voltage drop
! _{High current capability}
! _{The plastic material carries UL recognition 94V-0}
Mechanical Data
! Case: SMB/DO-214AA, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! _{Weight: 0.093 grams (approx.)}
B
SMB(DO-214AA)
Dim Min Max
A
3.30 3.94
A
C
B
4.06 4.70
C
1.91 2.21
D
0.15 0.31
D
E
5.00 5.59
G
0.10 0.20
J
H
0.76 1.52
H
G
E
J
2.00 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
CHARACTERISTICS
SYMBOL HS3AB HS3BB HS3DB HS3GB HS3JB HS3KB HS3MB
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100 200 400 600 800 1000
Maximum RMS Voltage
VRMS
35
70
140 280 420 560 700
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surage Current
@TA =55 ℃
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 3.0A DC(Note1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25℃
@TJ=100℃
Maximum Reverse Recovery Time(Note 1)
VDC
50
100 200 400 600 800 1000
I(AV)
3.0
IFSM
150
VF
1.0
1.3
1.7
5.0
IR
100
TRR
50
75
Typical Junction Capacitance (Note2)
CJ
50
30
Typical Thermal Resistance (Note3)
R JA
20
Operating Temperature Range
TJ
-50 to +150
Storage Temperature Range
TSTG
-50 to +150
NOTES: 1.Measured with IF=0.5A，IR=1A ，IRR=0.25A
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
3.Thermal resistance junction to ambient
UNIT
V
V
V
A
A
V
uA
nS
pF
℃/W
℃
℃
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