HFM301 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)

HFM301 - HFM308
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 3.0 A
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop, High Efficiency
! Low Power Loss
! Ultra-Fast Recovery Time
! Plastic Case Material has UL Flammability
Classification Rating 94V-O
Mechanical Data
! Case: SMC/DO-214AB, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! _{Weight: 0.21 grams (approx.)}
B
A
J
H
G
E
SMC/DO-214AB
Dim Min Max
A
5.59 6.22
C
B
6.60 7.11
C
2.75 3.18
D
0.15 0.31
D
E
7.75 8.13
G
0.10 0.20
H
0.76 1.52
J
2.00 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol HFM301 HFM302 HFM303 HFM304 HFM305 HFM306 HFM307 HFM308 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM
50
100
200
300
400
600
800
1000
V
VR
VR(RMS)
35
70
140
210
280
420
560
700
V
Average Rectified Output Current @T_L = 55°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@I_F = 3.0A VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 100°C
IRM
Reverse Recovery Time (Note 1)
trr
Typical Junction Capacitance (Note 2)
jC
Typical Thermal Resistance (Note 3)
R
JL
Operating and Storage Temperature Range
Tj, TSTG
Note: 1. Measured with I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
3.0
150
1.0
50
1.3
5.0
50
17
50
-50 to +150
1.85
75
A
A
V
µA
nS
pF
°C/W
°C
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