HER601S Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

HER601S - HER608S
HIGH EFFICIENCY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 6.0 A
Features
! High Surge Current Capability
! ^{Low Leakage and Forward Voltage Drop}
! _{Plastic Material - UL Flammability}
Classification 94V-0
! Low Power Loss, High Efficiency
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-201AD
Dim
Min
Max
A
25.40
—
B
8.50
9.53
C
0.96
1.06
D
4.80
5.21
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^TA ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
HER HER HER HER HER HER HER HER
601S 602S 603S 604S 605S 606S 607S 608S
50 100 200 300 400 600 800 1000
Unit
V
RMS Reverse Voltage
VR(RMS)
35
70 140 210 280 420 560 700
V
Average Rectified Output Current
(Note 1)
@T_A = 55°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@I_F = 6.0A
VFM
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
Reverse Recovery Time (Note 2)
trr
6.0
A
200
A
1.0
1.3
1.7
V
10.0
100
µA
50
75
nS
Typical Junction Capacitance (Note 3)
Cj
100
65
pF
Operating Temperature Range
Tj
-65 to +125
°C
Storage Temperature Range
TSTG
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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