HER501G Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 5.0 AMP. Glass Passivated High Efficient Rectifiers

VOLTAGE RANGE: 50 - 1000V
CURRENT: 5.0 A
Features
! Glass Passivated Die Construction
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
HER501G - HER508G
GLASS PASSIVATED ULTRAFAST DIODES
A
B
A
C
D
DO-201AD
Dim
Min
Max
A
25.40
—
B
8.50
9.53
C
0.96
1.06
D
4.80
5.21
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Maximum Recurrent Peak Reverse Voltage
Symbol
HER HER HER HER
501G 502G 503G 504G
HER HER HER HER
505G 506G 507G 508G
Unit
VRRM 50 100 200 300 400 600 800 1000 V
Maximum RMS Voltage
VRMS
35
70 140 210 280 420 560 700
V
Maximum DC Blocking Voltage
VDC
50 100 200 300 400 600 800 1000 V
Maximum Average Forward Current
IF(AV)
5.0
A
0.375"(9.5mm) Lead Length
Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
IFSM
200
A
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 5.0 A
VF
1.1
1.7
V
Maximum DC Reverse Current
Ta = 25 °C
IR
10
µA
at Rated DC Blocking Voltage
Ta = 100 °C IR(H)
50
µA
Maximum Reverse Recovery Time ( Note 1 )
Trr
50
75
ns
Typical Junction Capacitance ( Note 2 )
CJ
50
pf
Junction Temperature Range
TJ
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
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