HER501 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – HIGH EFFICIENCY RECTIFIERS(5.0A,50-400V)

HER501 - HER508
HIGH EFFICIENCY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 5.0 A
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-201AD
Dim
Min
Max
A
25.40
—
B
8.50
9.53
C
0.96
1.06
D
4.80
5.21
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^@TA^{=25°C unless otherwise specified}
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
HER
501
HER
502
HER
503
HER
504
HER
505
HER
506
HER
507
HER
508
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM 50 100 200 300 400 600 800 1000 V
Maximum RMS Voltage
VRMS
35
70 140 210 280 420 560 700
V
Maximum DC Blocking Voltage
VDC
50 100 200 300 400 600 800 1000 V
Maximum Average Forward Current
IF(AV)
5.0
A
0.375"(9.5mm) Lead Length
Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
IFSM
200
A
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 5.0 A
VF
1.1
1.7
V
Maximum DC Reverse Current
Ta = 25 °C
IR
10
µA
at Rated DC Blocking Voltage
Ta = 100 °C IR(H)
50
µA
Maximum Reverse Recovery Time ( Note 1 )
Trr
50
75
ns
Typical Junction Capacitance ( Note 2 )
CJ
50
pf
Junction Temperature Range
TJ
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
1 of 2
www.sunmate.tw