HER301 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – HIGH EFFICIENCY RECTIFIERS(3.0A,50-400V)

HER301 - HER308
HIGH EFFICIENCY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 3.0 A
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: D O - 2 0 1 A D , Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-201AD
Dim
Min
Max
A
25.40
—
B
8.50
9.53
C
0.96
1.06
D
4.80
5.21
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
HER
301
50
HER
302
100
HER
303
200
HER
304
300
HER
305
400
Maximum RMS Voltage
VRMS
35
70 140 210 280
Maximum DC Blocking Voltage
VDC
50 100 200 300 400
Maximum Average Forward Current
IF(AV)
3.0
0.375"(9.5mm) Lead Length
Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
IFSM
150
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 3.0 A
VF
1.1
Maximum DC Reverse Current
Ta = 25 °C
IR
10
at Rated DC Blocking Voltage
Ta = 100 °C IR(H)
50
Maximum Reverse Recovery Time ( Note 1 )
Trr
50
Typical Junction Capacitance ( Note 2 )
CJ
50
Junction Temperature Range
TJ
- 65 to + 150
Storage Temperature Range
TSTG
- 65 to + 150
HER
306
600
420
600
HER
307
800
560
800
1.7
75
HER
308
1000
700
1000
UNIT
V
V
V
A
A
V
µA
µA
ns
pf
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
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