HER101 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

HER101 - HER108
HIGH EFFICIENCY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.0 A
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case:D O - 4 1 Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Maximum Recurrent Peak Reverse Voltage
Symbol ^HER
101
HER
102
HER HER
103 104
HER
105
HER
106
HER HER
107 108
Unit
VRRM 50 100 200 300 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 210 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 A
VDC
IF(AV)
50 100 200 300 400 600 800 1000 V
1.0
A
IFSM
VF
30
1.1
A
1.7
V
Maximum DC Reverse Current
Ta = 25 °C
IR
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
Maximum Reverse Recovery Time ( Note 1 )
Trr
5
50
50
µA
µA
75
ns
Typical Junction Capacitance ( Note 2 )
CJ
50
pf
Junction Temperature Range
Storage Temperature Range
TJ
TSTG
- 65 to + 150
°C
- 65 to + 150
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
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