GSD2004WS Datasheet, PDF (1/1 Pages) Vishay Siliconix – High-Voltage Small-Signal Switching Diode

GSD2004WS
SURFACE MOUNT FAST SWITCHING DIODE
Features
! Silicon Epitaxial Planar Diode
! _{Fast switching diode,especially suited for}
applications requiring high voltage capa-
bility
Mechanical Data
! Case: SOD-323, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.004 grams (approx.)
! Marking: A3
A
SOD-323
C
Dim Min
Max
D
A
2.30 2.70
B
B
1.75 1.95
C
1.15 1.35
E
D
0.25 0.35
G
E
0.05 0.15
G
0.70 0.95
H
0.30
—
All Dimensions in mm
H
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Parameter
Test condition
Symbol
Continuous reverse voltage
Peak repetitive reverse voltage
Forward current (continuous)
Peak repetitive forward current
Non-repetitive peak forward
current
t_p = 1 µs
V_R
V_RRM
I_F
I_FRM
I_FSM
Power dissipation
t_p = 1 s
I_FSM
P_tot
1) _{Device on Fiberglass Substrate, see layout on second page}
Thermal Characteristics ^Tamb ^{= 25 °C, unless otherwise specified}
Parameter
Test condition
Symbol
Typical thermal resistance
junction to ambient air
R_thJA
Junction temperature
T_j
Storage temperature range
T_S
1) _{Device on Fiberglass Substrate, see layout on second page}
Electrical Characteristics ^Tamb ^{= 25 °C, unless otherwise specified}
Parameter
Test condition
Symbol
Min
Reverse breakdown voltage
I_R = 100 µA
V_BR
300
Leakage current
V_R = 240 V
I_R
V_R = 240 V, T_j = 150 °C
I_R
Forward voltage
I_F = 20 mA
V_F
I_F = 100 mA
V_F
Diode capacitance
V_F = V_R = 0, f = 1 MHz
C_tot
Reverse recovery time
I_F = I_R = 30 mA, I_rr = 3.0 mA,
t_rr
R_L = 100 Ω
1) _{Device on Fiberglass Substrate, see layout}
Value
240
300
225
625
4.0
1.0
200¹⁾
Value
650¹⁾
150
- 65 to + 150
Typ.
0.83
Unit
V
V
mA
mA
A
A
mW
Unit
°C/W
°C
°C
Max
Unit
V
100
nA
100
µA
0.87
V
1.00
V
5.0
pF
50
ns