GSD2004WS-V Datasheet, PDF (1/1 Pages) Vishay Siliconix – Small Signal Switching Diode, High Voltage

GSD2004WS-V
225mA Surface Mount Small Signal Fast Switching Diode
Features
· _{Silicon Epitaxial Planar Diode}
· Fast switching diode,especially suited for
applications requiring high voltage capa- bility
· Lead (Pb)-free component
· Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
· _{Case: SOD323 plastic case}
· Weight: approx. 5.0 mg
· _{Packaging Codes/Options:}
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
C
H
B
A
M
K
J
L
SOD-323
Dim Min Max
A
0.25 0.35
B
1.20 1.40
C
2.30 2.70
H
1.60 1.80
J
0.00 0.10
K
1.0 1.1
L
0.20 0.40
M 0.10 0.15
α
0°
8°
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Parameter
Test condition
Continuous reverse voltage
Peak repetitive reverse voltage
Forward current (continuous)
Peak repetitive forward current
Non-repetitive peak forward
current
Power dissipation
t_p = 1 µs
t_p = 1 s
Parameter
Test condition
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
I_R = 100 µA
V_R = 240 V
V_R = 240 V, T_j = 150 °C
I_F = 20 mA
I_F = 100 mA
V_F = V_R = 0, f = 1 MHz
I_F = I_R = 30 mA, I_rr = 3.0 mA,
R_L = 100 Ω
Device on Fiberglass Substrate, see layout on second page
Symbol
V_R
V_RRM
I_F
I_FRM
I_FSM
I_FSM
P_tot
Symbol
Min
V_BR
300
I_R
I_R
V_F
V_F
C_tot
t_rr
Value
240
300
225
625
4.0
1.0
200¹⁾
Typ.
0.83
Unit
V
V
mA
mA
A
A
mW
Max
Unit
V
100
nA
100
µA
0.87
V
1.00
V
5.0
pF
50
ns
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