GS5ABF Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – SURFACE MOUNT SILICON RECTIFIER DIODES

GS5ABF - GS5MBF
SURFACE MOUNT SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 5.0 A
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop
! Low Power Loss
! Built-in Strain Relief
B
! Plastic Case Material has UL Flammability
C
E










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Mechanical Data
! Case:SMBF , Molded Plastic
! Terminals: Solder Plated, Solderable
D
H
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
L
! Marking: Type Number
! Weight: 0.0018 ounces,0.05grams
E
A
SMBF
Dim Min Max Typ
A 5.45 5.55 5.50
B 4.27 4.33 4.30
C 3.57 3.63 3.60
D 1.32 1.38 1.35
E 1.96 2.00 1.98
H 0.019 0.021 0.20
L 0.73 0.77 0.75
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol GS5ABF GS5BBF GS5DBF GS5GBF GS5JBF GS5KBF GS5MBF Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM
50
VR
VR(RMS)
35
100
200 400 600
800 1000 V
70
140 280 420
560 700 V
Average Rectified Output Current @T_L = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I_F = 5.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 125°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
IO
IFSM
VFM
IRM
Cj
R
JL
Tj, TSTG
5.0
100
1.15
10
250
40
10
-65 to +150
A
A
V
µA
pF
°C/W
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
2. Mounted on P.C. Board with 8.0mm² land area.
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