GS3AC Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – SURFACE MOUNT SILICON RECTIFIER DIODES

GS3AC - GS3MC
SURFACE MOUNT SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 3.0 A
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop
! <sup>Low Power Loss




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! Plastic Case Material has UL Flammability
B
Classification Rating 94V-O
Mechanical Data
! Case: SMC/DO-214AB, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.093 grams (approx.)
A
C
D
J
H
G
E
SMC/DO-214AB
Dim Min Max
A
5.59 6.22
B
6.60 7.11
C
2.75 3.18
D
0.15 0.31
E
7.75 8.13
G
0.10 0.20
H
0.76 1.52
J
2.00 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.
Characteristic
Symbol GS3AC GS3BC GS3DC GS3GC GS3JC GS3KC GS3MC Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
VR
RMS Reverse Voltage
VR(RMS)
35
Average Rectified Output Current @T_L = 75°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@I_F = 3.0A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 125°C
IRM
Reverse Recovery Time (Note 1)
trr
Typical Junction Capacitance (Note 2)
Cj
Typical Thermal Resistance (Note 3)
R
JL
Operating and Storage Temperature Range
Tj, TSTG
Note: 1. Measured with I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm² land area.
100 200 400 600 800 1000 V
70
140 280 420 560 700
V
3.0
A
100
A
1.20
5.0
250
2.5
60
13
-65 to +150
V
µA
µS
pF
°C/W
°C
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