GS3ABF Datasheet, PDF (1/2 Pages) Microdiode Electronics (Jiangsu) Co.,Ltd. – SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER

GS3ABF - GS3MBF
SURFACE MOUNT SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 3.0 A
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop
! ^{Low Power Loss}
! Built-in Strain Relief
B
! Plastic Case Material has UL Flammability























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Mechanical Data
! Case:SMBF , Molded Plastic
! Terminals: Solder Plated, Solderable
D
per MIL-STD-750, Method 2026
H
! Polarity: Cathode Band or Cathode Notch
L
! Marking: Type Number
! Weight: 0.0018 ounces,0.05grams
E
A
SMBF
Dim Min Max Typ
A 5.45 5.55 5.50
B 4.27 4.33 4.30
C 3.57 3.63 3.60
D 1.32 1.38 1.35
E 1.96 2.00 1.98
H 0.019 0.021 0.20
L 0.73 0.77 0.75
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol GS3ABF GS3BBF GS3DBF GS3GBF GS3JBF GS3KBF GS3MBF Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM
50
100
200
400
600 800 1000
V
VR
VR(RMS)
35
70
140
280
420 560
700
V
Average Rectified Output Current @T_L = 75°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@I_F = 3.0A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 125°C
IRM
Reverse Recovery Time (Note 1)
trr
Typical Junction Capacitance (Note 2)
Cj
3.0
A
100
A
1.20
V
5.0
250
µA
2.5
µS
60
pF
Typical Thermal Resistance (Note 3)
R
JL
Operating and Storage Temperature Range
Tj, TSTG
Note: 1. Measured with I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm² land area.
13
-65 to +150
°C/W
°C
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