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GS3AAF Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – SURFACE MOUNT SILICON RECTIFIER DIODES
GS3AAF - GS3MAF
SURFACE MOUNT SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 3.0 A
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop
! Low Power Loss
! Built-in Strain Relief
B
! Plastic Case Material has UL Flammability
C
E
            Cla ssificatio n R a tin g 9 4 V -O                                                 
Mechanical Data
! Case: SMAF,Molded Plastic
D
! Terminals: Solder Plated, Solderable
H
per MIL-STD-750, Method 2026
L
! Polarity:Color band denotes cathode end
! Mounting Position:Any
E
! Weight:0.0018 ounce, 0.064 grams
A
SMAF
Dim Min Max Typ
A 4.75 4.85 4.80
B 3.68 3.72 3.70
C 2.57 2.63 2.60
D 0.097 1.03 1.00
E 1.38 1.42 1.40
H 0.13 0.17 0.15
L 0.63 0.67 0.65
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol GS3AAF GS3BAF GS3DAF GS3GAF GS3JAF GS3KAF GS3MAF Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM
50
100
200
400
600 800 1000
V
VR
VR(RMS)
35
70
140
280
420 560
700
V
Average Rectified Output Current @TL = 75°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@IF = 3.0A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
IRM
Reverse Recovery Time (Note 1)
trr
Typical Junction Capacitance (Note 2)
Cj
3.0
A
100
A
1.20
V
5.0
250
µA
2.5
µS
60
pF
Typical Thermal Resistance (Note 3)
RJL
Operating and Storage Temperature Range
Tj, TSTG
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
13
-65 to +150
°C/W
°C
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