GS2MF Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – SURFACE MOUNT SILICON RECTIFIER DIODES

GS2AF - GS2MF
SURFACE MOUNT SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 2.0 A
Features
! For surface mounted applications
! Low reverse leakage
! Built-in strain relief,ideal for automated placement
! High forward surge current capability
! ^{High temperature soldering guaranteed:}
B
250 C/10 seconds at terminals
C
E
Mechanical Data
! Case:SMBF , Molded Plastic
! Terminals: Solder Plated, Solderable
D
per MIL-STD-750, Method 2026
H
! Polarity: Cathode Band or Cathode Notch
L
! Marking: Type Number
! Weight: 0.0018 ounces,0.05grams
E
A
SMBF
Dim Min Max Typ
A 5.45 5.55 5.50
B 4.27 4.33 4.30
C 3.57 3.63 3.60
D 1.32 1.38 1.35
E 1.96 2.00 1.98
H 0.019 0.021 0.20
L 0.73 0.77 0.75
All Dimensions in mm
Maximum Ratings and Electrical Characteristics _{TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=110 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
Symbol GS2AF GS2BF GS2DF GS2GF GS2JF GS2KF GS2MF ^Unit
VRRM 50 100 200 400 600 800 1000 V
VRMS
35
70 140 280 420 560 700 V
VDC ^{50 100 200 400 600 800 1000 V}
I(AV)
2.0
A
IFSM
VF
IR
CJ
RθJA
TJ,TSTG
60.0
1.1
5.0
50.0
30.0
50.0
-65 to +175
A
V
µA
pF
C/W
C
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
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