GS2AL Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – SURFACE MOUNT SILICON RECTIFIER DIODES

GS2AL - GS2ML
SURFACE MOUNT SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 2.0 A
Features
! For surface mounted applications
! Low reverse leakage
! Built-in strain relief,ideal for automated placement
! High forward surge current capability
! ^{High temperature soldering guaranteed:}
B
250 C/10 seconds at terminals
Mechanical Data
C
E
! Case: SOD-123FL
plastic body over passivated junction
! Terminals : Plated axial leads,
D
! solderable per MIL-STD-750,Method 2026
H
! Polarity : Color band denotes cathode end
L
! Mounting Position : Any
! Weight:0.0007 ounce, 0.02 grams
E
A
SOD-123FL
Dim Min Max Typ
A 3.58 3.72 3.65
B 2.72 2.78 2.75
C 1.77 1.83 1.80
D 1.02 1.08 1.05
E 0.097 1.03 1.00
H 0.13 0.17 0.15
L 0.53 0.57 0.55
All Dimensions in mm
Maximum Ratings and Electrical Characteristics _{TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol GS2AL GS2BL GS2DL GS2GL GS2JL GS2KL GS2ML Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=110 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
VRRM 50 100 200 400 600 800 1000 V
VRMS
35
70 140 280 420 560 700 V
VDC ^{50 100 200 400 600 800 1000 V}
I(AV)
2.0
A
IFSM
VF
IR
CJ
RθJA
TJ,TSTG
60.0
1.1
5.0
50.0
30.0
50.0
-65 to +175
A
V
µA
pF
C/W
C
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
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