GS2AAF Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – SURFACE MOUNT SILICON RECTIFIER DIODES

GS2AAF - GS2MAF
SURFACE MOUNT SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 2.0 A
Features
! For surface mounted applications
! Low reverse leakage
! Built-in strain relief,ideal for automated placement
! High forward surge current capability
! ^{High temperature soldering guaranteed:}
250 C/10 seconds at terminals
Mechanical Data
! Case: SMAF,Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity:Color band denotes cathode end
! ^{Mounting Position:Any}
! Weight:0.0018 ounce, 0.064 grams
B
C
E
D
H
L
E
A
SMAF
Dim Min Max Typ
A 4.75 4.85 4.80
B 3.68 3.72 3.70
C 2.57 2.63 2.60
D _{0.097 1.03} 1.00
E 1.38 1.42 1.40
H 0.13 0.17 0.15
L 0.63 0.67 0.65
All Dimensions in mm
Maximum Ratings and Electrical Characteristics _{TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol GS2AAF GS2BAF GS2DAF GS2GAF GS2JAF GS2KAF GS2MAF Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=110 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
VRRM
50
100
200 400 600 800 1000 V
VRMS
35
70
140 280 420 560
700
V
VDC
50
100
200 400 600 800 1000 V
I(AV)
2.0
A
IFSM
60.0
A
VF
1.1
V
IR
5.0
50.0
µA
Typical junction capacitance (NOTE 1)
CJ
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
RθJA
TJ,TSTG
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
30.0
50.0
-65 to +175
pF
C/W
C
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