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GS1AL Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – SURFACE MOUNT RECTIFIER DIODES
GS1AL - GS1ML
SURFACE MOUNT RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.0 A
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop
! Low Power Loss
! Built-in Strain Relief
! Plastic Case Material has UL Flammability
Classification Rating 94V-O
B
C
E
SOD-123FL
Mec h an ic al D a ta                                                                   Dim  Min Max Typ
! Case: JEDEC SOD-123FL, molded plastic
A 3.58 3.72 3.65
B 2.72 2.78 2.75
over passivated chip
D
! Polarity: Color band denotes positive end
C 1.77 1.83 1.80
H
D 1.02 1.08 1.05
E 0.097 1.03 1.00
L
( cathode ) except for bidirectional
H 0.13 0.17 0.15
L 0.53 0.57 0.55
! Mounting position: Any
All Dimensions in mm
E
! Weight: 0.006 ounces, 0.02 gram
A
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol GS1AL GS1BL GS1DL GS1GL GS1JL GS1KL GS1ML Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM
50
100
VR
VR(RMS)
35
70
Average Rectified Output Current @TL = 100°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@IF = 1.0A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
IRM
Reverse Recovery Time (Note 1)
trr
Typical Junction Capacitance (Note 2)
Cj
Typical Thermal Resistance (Note 3)
RJL
Operating and Storage Temperature Range
Tj, TSTG
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
200
400
600
140
280
420
1.0
30
1.10
5.0
200
2.5
15
30
-65 to +175
800
1000
V
560
700
V
A
A
V
µA
µS
pF
°C/W
°C
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