GS1000F Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – SURFACE MOUNT SILICON RECTIFIER DIODES

GS1000F - GS1010F
SURFACE MOUNT SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.0 A
Features
! ^{For surface mounted applications}
! ^{Low profile package}
! Ideal for automated placement
! High temperaturesoldering : 260°C /10
seconds at terminals
! Glass Passivated Chip Junction
Mechanical Data
! Case: SMAF,Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity:Color band denotes cathode end
! ^{Mounting Position:Any}
! Weight:0.0018 ounce, 0.064 grams
B
C
E
D
H
L
E
A
SMAF
Dim Min Max Typ
A 4.75 4.85 4.80
B 3.68 3.72 3.70
C 2.57 2.63 2.60
D _{0.097 1.03} 1.00
E 1.38 1.42 1.40
H 0.13 0.17 0.15
L 0.63 0.67 0.65
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol GS1000F GS1002F
Marking FA
FB
GS1003F GS1004F GS1006F
FD
FG
FJ
GS1008F GS1010F
FK
FM
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TA=65 C (NOTE 1)
VRRM
50
100
200
400
600
800
1000 V
VRMS
35
70
140
280
420
560
700
V
V_DC
50
100
200
400
600
800
1000 _V
I(AV)
1.0
A
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
25.0
A
rated load (JEDEC Method) TL=25 C
Maximum instantaneous forward voltage at 1.0A VF
1.1
V
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=125 C
IR
10.0
50.0
µA
Typical junction capacitance (NOTE 2)
CJ
4
pF
Typical thermal resistance (NOTE 3)
RθJA
65
K/W
Operating junction and storage temperature range TJ,TSTG
-50 to +150
C
Note: 1.Averaged over any 20ms period.
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
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