GPP20A Datasheet, PDF (1/2 Pages) Vishay Siliconix – Glass Passivated Junction Rectifiers

GPP20A - GPP20M
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 2.0 A
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: D O - 1 5
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.40 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-15
Dim
Min
Max
A
25.40
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol GPP20A GPP20B GPP20D GPP20G GPP20J GPP20K GPP20M Unit
VRRM
VRWM
50
100 200 400 600 800 1000
V
VR
VR(RMS)
35
70
140 280 420 560 700
V
Average Rectified Output Current
(Note 1)
@T_A = 75°C
IO
2.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
70
A
rated load (JEDEC Method)
Forward Voltage
@I_F = 2.0A
VFM
1.0
V
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
5.0
50
µA
Typical Junction Capacitance (Note 2)
Cj
20
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
R
JA
40
K/W
Operating Temperature Range
Tj
-65 to +125
°C
Storage Temperature Range
TSTG
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
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