GPP10A Datasheet, PDF (1/2 Pages) Vishay Siliconix – Glass Passivated Junction Rectifiers

GPP10A - GPP10M
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.0 A
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case:D O - 4 1 , Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.35 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.
Characteristic
Symbol GPP10A GPP10B GPP10DGPP10G GPP10J GPP10K GPP10M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
VR
RMS Reverse Voltage
VR(RMS)
35
Average Rectified Output Current
(Note 1)
@T_A = 75°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
VFM
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
Typical Junction Capacitance (Note 2)
Cj
Typical Thermal Resistance Junction to Ambient
(Note 1)
R
JA
Operating Temperature Range
Tj
Storage Temperature Range
TSTG
100 200 400
600 800 1000
V
70
140 280
420 560 700
V
1.0
A
30
A
1.0
V
5.0
50
µA
15
pF
50
K/W
-65 to +125
°C
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
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