GP25A Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – AXIAL LEADED SILICON RECTIFIER DIODES

GP25A - GP25M
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 2.5 A
Features
! ^{Glass Passivated Die Construction}
! _{Diffused Junction}
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: D O - 1 5
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Mounting Position: Any
! Marking: Type Number
! Weight: 0.40 grams (approx.)
A
B
A
C
D
DO-15
Dim
Min
Max
A
25.40
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol GP25A
Maximum recurrent peak reverse voltage
V_RRM 50
Maximum RMS voltage
V_RMS
35
Maximum DC blocking voltage
V_DC
50
Maximum average forw ard rectified current
9.5mm lead length @T_A=75
I_F(AV)
Peak forw ard surge current
8.3ms single half-sine-w ave
superimpoded on ratde load @T_J=125
Maximum instantaneous forw ard voltage
@ 2.5 A
I_FSM
V_F
Maximum reverse current
@T_A =25
at rated DC blocking voltage @TA =100
I^R
Typical junction capacitance (Note1)
Typical thermal resistance
(Note2)
Operaring junction temperature range
Storage temperature range
C_J
R _JA
T_J
T_STG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
GP25B
100
70
100
GP25D
200
140
200
GP25G
400
280
400
GP25J
600
420
600
2.5
150.0
1.1
5.0
50.0
25
30
-55----+150
-55----+150
GP25K
800
560
800
GP25M
1000
700
1000
Unit
V
V
V
A
A
V
A
pF
/W
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