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GBU25A Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SILICON BRIDGE RECTIFIERS
GBU25A-GBU25M
SILICON BRIDGE RECTIFIERS
VOLTAGE RANGE: 50 - 1000V
CURRENT: 25.0A
Features
! High Reliability
! High Current Capability
! Low Forward Voltage Drop
! Glass Passivated Die Construction
! High Surge Current Capability
! Ideal for Printed Circuit Boards
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: As Marked on Body
! Weight: 4.0 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
GBU
.310(7.9)
.290(7.4)
.080(2.03)
.060(1.52)
.933(23.7)
.894(22.7)
.160(4.1)
.140(3.5)
+
+
.075(1.9)R.TYP.
_ ~ ~+
.185(4.7)
.165(4.2)
450
.085(2.16)
.065(1.65)
.740(18.8)
.720(18.3)
.100(2.54)
.085(2.16)
.190(4.83)
.210(5.33)
.050(1.27)
.040(1.02)
.710(18)
.690(17.5)
.140(3.56)
.130(3.30)
.085(2.18)
.075(1.90)
.022(.56)
.018(.46)
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol GBU25A GBU25B GBU25D GBU25G GBU25J GBU25K GBU25M Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard Tc=100
output current
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
VRRM
50
V R MS
35
VDC
50
IF (AV)
IF SM
100
200
70
140
100
200
400
600
800
280
420
560
400
600
800
25.0
240.0
Maximum instantaneous forw ard voltage
at 12.5 A
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=125
Typical junction capacitance per leg (note 3)
Typical thermal resistance per leg (note 2)
(note 1)
Operating junction temperature range
Storage temperature range
VF
IR
CJ
RθJA
RθJC
TJ
TSTG
1.0
5.0
500.0
211
94
21.0
2.2
- 55 ---- + 150
- 55 ---- + 150
N OTE: 1. Unit case m ounted on 3.2x3.2x0.12" thick (6.2x8.2x0.3cm ) AI. Plate.
2. U nits m ounted in f ree air, no heat sink on P.C .B., 0.5x0.5"(12x12m m ) copper pads, 0.375"(9.5m m ) lead length.
3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts.
1000 V
700
V
1000 V
A
A
V
μA
mA
pF
/W
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