EU1Z Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

EU1Z - EU1C
HIGH EFFICIENCY RECTIFIER DIODES
VOLTAGE RANGE: 200 - 1000V
CURRENT: 0.25 -0.5A
Features
! ^{Low cost}
! ^{Diffused junction}
! ^{Low leakage}
! Low forward voltage drop
! _{Easily cleaned with freon, Alcohol, lsopropand and}
similar solvents
Mechanical Data
! Case: D O - 4 1 Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
Maximum peak repetitive reverse voltage
V_RRM
Maximum RMS voltage
V_RMS
Maximum DC blocking voltage
V_DC
Maximum average forw ard rectified current
9.5mm lead length @T_A=75
Peak forw ard surge current
10ms single half-sine-w ave
superimplsed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ I_F=I_F(AV)
I_F(AV)
I_FSM
V_F
Maximum reverse current
@T_A=25
at Rated DC blocking voltage @T_A=100
Maximum reverse recovery time
(Note1)
Typical junction capacitance
(Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
Storage temperature range
I_R
t_rr
C_J
R_θJL
T_J
T_STG
NOTE: 1. Measured with I_F=0.5A,I_R=1A,I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
EU1Z
200
140
200
EU1
400
280
400
0.25
EU1A
600
420
600
EU1C
1000
700
1000
0.5
15.0
2.5
10.0
150.0
100
20
15
17
- 55 ----- + 150
- 55 ----- + 150
Unit
V
V
V
A
A
V
A
ns
pF
/W
1 of 2
www.sunmate.tw