EU02Z Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

EU02Z - EU02A
HIGH EFFICIENCY RECTIFIER DIODES
VOLTAGE RANGE: 200 - 600V
CURRENT: 1.0 A
Features
! ^{Diffused junction}
! ^{Low leakage}
! ^{Low forward voltage drop}
! High current capability
! Eas ily cleaned with freon, Alcohol, lsopropand and
similar solvents
Mechanical Data
! Case: DO-41, molded plastic
! Terminals: Axial leads,solderable per MIL-STD-202,
Method 208
! Polarity: Color band denotes cathode
! _{Weight: 0.012 ounces , 0.34 gram s}
! Mounting: Any
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^TA ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
Maximum peak repetitive reverse voltage
V_RRM
Maximum RMS voltage
V _{R MS}
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length
@T_A=75
Peak forw ard surge current
10ms single half-sine-w ave
superimplsed on rated load
@TJ=125
Maximum instantaneous f orw ard voltage
@ 1.0A
V_DC
I_F(AV)
I_FSM
V_F
Maximum reverse current
@T_A=25
I^R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time
(Note1)
t_rr
Typical junction capacitance
(Note2)
C_J
Typical thermal resistance
(Note3)
Operating junction temperature range
R_{θ J L}
T_J
Storage temperature range
T_STG
NOTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Therm al resistance junction to ambient.
EU02Z
200
140
200
EU02
400
280
400
1.0
EU02A
600
420
600
15.0
1.4
10.0
300.0
100
20
15
20
- 55 ----- + 150
- 55 ----- + 150
Unit
V
V
V
A
A
V
A
ns
pF
̼ͤ
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