ESJA04-02A Datasheet, PDF (1/2 Pages) Fuji Electric – High Voltage Silicon Diode

Features
ESJA04-02A
1mA Axial Leaded High Voltage Silicon Diode
Mechanical Data
· Weight: 0.2 grams (approx.)
· Vibration Proof:5 G
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Items
Repetitive peak reverse voltage
Non-repetitive peak forward current
Average forward current
Allowable junction temperature
Conditions Symbols
V_RRM
50Hz Sine-half
wave peak value
I_FSM
50Hz Sine-wave I_AV
Tj
Storage Temperature range
Tstg
Allowable operating case temperature
Tc
Maximum forward voltage drop
1F=10mA
VF
Maximum reverse current
Maximum reverse current
Maximum reverse recovery time
VR=2KV
IR1
VR=2KV ,100^°C
IR2
1F=2mA,1R=4mA Trr
Maximum junction capacitance F=1MHz,VR=0V
Cj
Ratings
2
0.3
1
120
-40—120
100
12
2
5
0.08
3
Units
KV peak
A peak
mA
°_C
°_C
°_C
V
uA
uA
uS
PF
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