ESH1B Datasheet, PDF (1/2 Pages) Vishay Siliconix – Surface Mount Ultrafast Plastic Rectifiers

ESH1B - ESH1D
SURFACE MOUNT ULTRAFAST PLASTIC RECTIFIER DIODES
VOLTAGE RANGE: 100 - 200V
CURRENT: 1.0 A
Features
! Low profile package
! _{Ideal for automated placement}
! Glass passivated chip junction
! Ultrafast recovery times for high efficiency
! Low forward voltage, low power loss
Mechanical Data
! Case: SMA(DO-214AC)Molded Plastic
! Case Material - UL Flammability Rating
Classification 94V-0
! Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
! Polarity: Cathode Band or Cathode Notch
! ^{Approx. Weight: SMA 0.064 grams}
B
A
J
H
G
E
SMA(DO-214AC)
Dim Min Max
C
A
2.29 2.92
B
4.00 4.60
C
1.27 1.63
D
D
0.15 0.31
E
4.80 5.59
G
0.10 0.20
H
0.76 1.52
J
2.01 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
ESH1B
ESH1C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM
VR
VR(RMS)
100
70
Average Rectified Output Current @T_L = 120°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 100°C
Reverse Recovery Time (Note 1)
IO
IFSM
VFM
IRM
trr
Typical Junction Capacitance (Note 2)
Cj
Typical Thermal Resistance (Note 3)
R
JL
Operating and Storage Temperature Range
Tj, TSTG
Note: 1. Measured with I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm² land area.
150
105
1.0
50
0.90
1.0
25
25
25
30
-65 to +150
ESH1D
Unit
200
V
140
V
A
A
V
µA
nS
pF
°C/W
°C
1 of 2
www.sunmate.tw