ES2A Datasheet, PDF (1/2 Pages) Jinan Gude Electronic Device – 2.0AMP. SUPER FAST RECOVRY SILICON RECTIFIERS

ES2A - ES2J
SURFACE MOUNT SUPER FAST RECTIFIER DIODES
VOLTAGE RANGE: 50 - 600V
CURRENT: 2.0 A
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop, High Efficiency
! Low Power Loss
! Super-Fast Recovery Time
! Plastic Case Material has UL Flammability
Classification Rating 94V-O
Mechanical Data
! Case: SMB/DO-214AA, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! _{Weight: 0.093 grams (approx.)}
B
A
J
H
G
E
SMB(DO-214AA)
Dim Min Max
A
3.30 3.94
C
B
4.06 4.70
C
1.91 2.21
D
0.15 0.31
D
E
5.00 5.59
G
0.10 0.20
H
0.76 1.52
J
2.00 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics _{TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol ES2A ES2B ES2C ES2D ES2E ES2G ES2J Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM
50
100 150 200 300 400 600
V
VR
VR(RMS)
35
70
105 140 210 280 420
V
Average Rectified Output Current @T_L = 75 °C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IO
IFSM
Forward Voltage
@I_F = 2.0A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_{A = 100°C}
IRM
Reverse Recovery Time (Note 1)
trr
Typical Junction Capacitance (Note 2)
Cj
Typical Thermal Resistance (Note 3)
R
JL
Operating and Storage Temperature Range
Tj, TSTG
2.0
50
0.95
5.0
200
35
62
40
-65 to +150
1.25
A
A
1.7
V
µA
nS
pF
°C/W
°C
Note: 1. Measured with I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm² land area.
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