ES1Z Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – FAST RECOVER Y RECTIFIER DIODES

ES1Z - ES1F
FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 200- 1500V
CURRENT: 0.7 A
Features
! Low cost
! Diffused junction
! Low leakage
! ^{Low forward voltage drop}
! ^{High current capability}
! ^{Easily cleaned with Freon,Alcohol,Isopropanol}
and similar solvents
Mechanical Data
! Case: D O - 4 1 Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! _{Weight: 0.34 grams (approx.)}
! _{Mounting Position: Any}
! Marking: Type Number
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics _{TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 0.5/0.7A
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
Typical junction capacitance (Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
Storage temperature range
I_R
t_rr
C_J
R_θJA
T_J
T_STG
ES1Z
200
140
200
ES1
400
280
400
ES1A
600
420
600
0.7
30.0
2.5
5.0
100.0
350
15
50
-55----+150
-55---- +150
ES1F
1500
1050
1500
NOTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Unit
V
V
V
A
A
V
A
ns
pF
̼ͤ
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