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ERB44-02 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIER
VOLTAGE RANGE: 200 - 1000V
CURRENT: 1.0 A
Features
! Low leakage
! Low forward voltage drop
! High current capability
! Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
! The plastic material carries U/L recognition 94V-0
Mechanical Data
! Case: DO-41,molded plastic
! Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
! Polarity: Color band denotes cathode
! Mounting position: Any
! Weight: 0.35 grams (approx.)
ERB44-02 - ERB44-10
FAST RECOVERY RECTIFIER DIODES
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @TJ=125
Symbol ERB44-02
VRRM
200
VRMS
140
VDC
200
IF(AV)
IFSM
ERB44 -04 ERB44 -06 ERB44 -08 ERB44 -10 Unit
400
600
800
1000
V
280
420
560
700
V
400
600
800
1000
V
1.0
A
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0 A
VF
1.1
V
Maximum reverse current
@TA=25
IR
at rated DC blocking voltage @TA=100
5.0
100.0
μA
Maximum reverse recovery time (Note1)
trr
400
ns
Typical junction capacitance (Note2)
CJ
12
pF
Typical thermal resistance
(Note3)
RθJA
55
/W
Operating junction temperature range
TJ
- 55---- +150
Storage temperature range
TSTG
- 55---- + 150
NOTE:1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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